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Published October 1, 1987 | Version public
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Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100)Si substrates at room temperature

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Abstract

Room-temperature continuous-wave operation of large-area (120 μm X 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length), and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions.

Additional Information

© Copyright 1987 Optical Society of America Received June 22, 1987; accepted July 16, 1987 This research is supported by the U.S. Air Force Office of Scientific Research, the U.S. Office of Naval Research, the Defense Advanced Research Projects Agency, and the National Science Foundation. The research of H. Morkoç was partially funded by the U.S. Air Force Office of Scientific Research and by the Innovative Science and Technology Program through the Jet Propulsion Laboratory, California Institute of Technology. H. Morkoç also benefited from discussions with M. Mittlestein.

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3236
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CaltechAUTHORS:CHEol87

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http://www.opticsinfobase.org/abstract.cfm?URI=ol-12-10-812 (URL)

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2006-05-23
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2019-10-02
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