Calibration and control of in-plane Mg doping distribution in Mg_xZn_(1−x)O/ZnO heterostructures grown by molecular beam epitaxy
The in-plane Mg doping distribution in molecular beam epitaxy grown Mg_xZn_(1−x)O/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O₃ and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the Mg_xZn_(1−x)O/ZnO heterointerface.
© 2015 The Japan Society of Applied Physics. Received November 5, 2014; accepted December 26, 2014; published online January 26, 2015. This work was partly supported by a Grant-in-Aid for Scientific Research (Grants No. 24226002) from the Japan Society for the Promotion of Science (JSPS), and by Mizuho Foundation for the Promotion of Sciences.