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Published January 1, 1984 | Published
Journal Article Open

Graded collector heterojunction bipolar transistor


A graded collector heterojunction bipolar transistor is proposed. The graded collector improves device speed performance at high current densities by reducing the influence of the Kirk effect.

Additional Information

© 1984 American Institute of Physics. Received 6 September 1983; accepted 14 October 1983. This work is supported by the National Science Foundation and the Office of Naval Research.

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Published - CHIapl84.pdf


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August 22, 2023
August 22, 2023