Published August 1, 1970
| Version public
Journal Article
Open
Observation of propagation cutoff and its control in thin optical waveguides
Creators
Abstract
The first observation of optical cutoff in thin-film waveguides is reported. The waveguides consist of thin (~10µ) epitaxial layers of high-resistivity GaAs deposited on lower-resistivity GaAs substrates. The optical cutoff is controlled through the electro-optic effect by applying an electric field across the epitaxial layer.
Additional Information
©1970 The American Institute of Physics. Received 8 June 1970; in final form 15 June 1970. The authors wish to thank A. Shuskus and W. Oshinsky of United Aircraft Research Laboratories in East Hartford, Conn., for supplying the GaAs samples. Research supported by the Office of Naval Research and by the Advanced Research Projects Agency through the Army Research Office, Durham, N.C.Files
HALapl70.pdf
Files
(211.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:f5618bb0917b877926cec6af31e25663
|
211.7 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 7482
- Resolver ID
- CaltechAUTHORS:HALapl70
Dates
- Created
-
2007-02-23Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field