Published August 1, 1975
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Journal Article
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GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement
Abstract
Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm^2 at 300 °K.
Additional Information
© 1975 American Institute of Physics. Received 21 April 1975; in final form 26 May 1975. Work sponsored by the Office of Naval Research. The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of the Central Research Laboratory, Hitcahi Ltd., for their continuous encouragement, S. Yamashita for his assistance in the experiment, and A. Gover of California Institute of Technology for helpful discussions.Files
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2007-01-25Created from EPrint's datestamp field
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