Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published April 15, 1999 | Published
Journal Article Open

Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate


In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate for future reading and writing of the columns as individual bits for high density information storage. We have used magnetic force microscopy and scanning magneto-resistance microscopy to characterize the resulting magnets. We find the columns more magnetically stable than previously achieved with magnets embedded in a SiO2 substrate. Such stability is necessary before further writing of perpendicular patterned media can be demonstrated.

Additional Information

© 1999 American Institute of Physics. The authors gratefully acknowledge C. C. Cheng and O. J. Painter for many helpful discussions. They thank F. Spada, R. O'Barr, S. Y. Yamamoto, M. Re, and V. Prabhakaran for helpful suggestions, J. F. Smyth for providing them with the MR heads, and R. K. Lee for the growth of the MBE wafers. This work was funded by the National Science Foundation and the Army Research Office.

Attached Files

Published - WONjap99.pdf


Files (650.1 kB)
Name Size Download all
650.1 kB Preview Download

Additional details

August 22, 2023
March 5, 2024