Published July 1, 1986
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Lateral coherence properties of broad-area semiconductor quantum well lasers
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Abstract
The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.
Additional Information
Copyright © 1986 American Institute of Physics. Received 2 January 1986; accepted 11 March 1986. The work described in this paper was performed under a contract with the National Aeronautics and Space Administration (NAS7-918) and under grants from the Office of Naval Research and the Army Research Office. J. Salzman would like to acknowledge the support of the Bantrell Postdoctoral Fellowship and the Fulbright Fellowship. The authors would like to thank Y. Arakawa for assistance in the fabrication of the lasers used in this work.Files
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- 10055
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- CaltechAUTHORS:LARjap86
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2008-04-08Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field