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Published March 14, 2003 | Version Published
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Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

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Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Additional Information

© 2003 The American Physical Society (Received 5 April 2002; published 12 March 2003) We gratefully acknowledge support from DARPA under Grants No. DSO/SPINS-MDA 972-01-1-0024 (Caltech) and No. DARPA/ONR N00014-99-1-1096 (UCSB), and from the AFOSR under Grant No. F49620-02-10036 (UCSB). We also thank Professor P. E.Wigen for valuable discussions.

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Additional details

Identifiers

Eprint ID
3271
Resolver ID
CaltechAUTHORS:TANprl03

Funding

Defense Advanced Research Projects Agency (DARPA)
MDA 972-01-1-0024
Office of Naval Research (ONR)
N00014-99-1-1096
Air Force Office of Scientific Research (AFOSR)
F49620-02-10036

Dates

Created
2006-05-25
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Updated
2021-11-08
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