Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap
We have demonstrated selective epitaxial growth of Al_xGa_(1-x)As, with an abrupt transition in the bandgap lateral to the growth direction. Spontaneous compositional modulation, with an associated reduction in the effective bandgap, occurs in AlGaAs grown by molecular beam epitaxy on the sides of grooves in a GaAs substrate. The bandgap is observed to be dependent on the groove orientation. Possible mechanisms for the orientation dependent growth are discussed.
Additional Information© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors wish to acknowledge C. W. Nieh, Howard Z. Chen, Hadis Morkoç, and Amnon Yariv, who were collaborators in the initial stages of this work. We are grateful to Channing Ahn and Carol Garland, for their assistance with the transmission electron microscopy. We would like to acknowledge Larry Kapitan of Northeast Semiconductor, Inc., for supplying some of the molecular beam epitaxial growths used in this work. This work was supported by the Office of Naval Research.
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