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Published June 1987 | Version Published
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A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

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Abstract

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

Additional Information

© 1987 IEEE. Reprinted with permission. Manuscript received October 15, 1986; revised February IS, 1987. This work was supported by the U.S. Office of Naval Research (L. Cooper), the National Science Foundation (K. Gustafson), and the U.S. Army Research Office (R. Guenther). The author gratefully acknowledge Dr. B. Chang, D. Armstrong, W. Marshall, J. Mercado, and R. Wong for their assistance.

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9670
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CaltechAUTHORS:CHEieeejqe87

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http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=23107&arnumber=1073402&count=70&index=2 (URL)

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2008-02-27
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2019-10-03
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