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Published 1987 | Published
Book Section - Chapter Open

A Physical Charge-Controlled Model for MOS Transistors


As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an improved transistor model becomes a necessary tool for the VLSI designer [10]. We present a simple, physically based charge-controlled model. The current in the MOS transistor is described in terms of the mobile charge in the channel, and incorporates the physical processes of drift and diffusion. The effect of velocity saturation is included in the drift term. We define a complete set of natural units for velocity, voltage, length, charge, and current. The solution of the dimensionless current-flow equations using these units is a simple continuous expression, equally applicable in the subthreshold, saturation, and "ohmic" regions of transistor operation, and suitable for computer simulation of integrated circuits. The model is in agreement with measurements on short-channel transistors down to 0.35μ channel length.

Additional Information

© 1987 MIT Press. This work was supported by the System Development Foundation and the Semiconductor Research Corporation. Experimental devices were kindly provided by Amr Mohsen and Gerry Parker of Intel Corporation. We are grateful to Massimo Sivilotti, David Feinstein, and Cecilia Shen for many valuable discussions. We also thank Jim Campbell and Kathy Doughty for their help in acquiring experimental data, and Cal Jackson, Michael Emerling, Dave Gillespie, and Glenn Gribble for their aid in preparing this manuscript.

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August 19, 2023
March 5, 2024