Published August 1, 1983
| public
Journal Article
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High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate
- Creators
- Bar-Chaim, N.
- Lau, K. Y.
- Ury, I.
- Yariv, A.
Abstract
A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices.
Additional Information
Copyright © 1983 American Institute of Physics. (Received 1 March 1983; accepted for publication 29 April 1983) This research was supported by the Defense Advanced Research Project Agency.Files
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Additional details
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- 10610
- Resolver ID
- CaltechAUTHORS:BARapl83
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2008-05-21Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field