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Published November 2010 | Published
Journal Article Open

Ga+ beam lithography for suspended lateral beams and nanowires


The authors demonstrate the fabrication of suspended nanowires and doubly clamped beams by using a focused ion beam implanted Ga etch mask followed by an inductively coupled plasma reactive ion etching of silicon. This method will demonstrate how a two-step, completely dry fabrication sequence can be tuned to generate nanomechanical structures on either silicon substrates or silicon on insulator (SOI). This method was used to generate lateral nanowires suspended between 2 µm scaled structures with lengths up to 16 µm and widths down to 40 nm on a silicon substrate. The authors also fabricate 10 µm long doubly clamped beams on SOIs that are 20 nm thick and a minimum of 150 nm wide. In situ electrical measurements of the beams demonstrate a reduction of resistivity from > 37.5 Ω cm down to 0.25 Ω cm. Transmission electron microscopy for quantifying both surface roughness and crystallinity of the suspended nanowires was performed. Finally, a dose array for repeatable fabrication of a desired beam width was also experimentally determined.

Additional Information

© 2010 American Vacuum Society. Received 9 July 2010; accepted 2 August 2010; published 1 December 2010. M.D.H. gratefully acknowledges the support of the Fannie and John Hertz Foundation. M.S. acknowledges the support of the National Science Foundation under their Graduate Research Fellowship program Contract Nos. EPIC HR0011- 04-1-0054 and NACHOS W911NF-07-0277. This work was performed at the Kavli Nanoscience Institute at Caltech, and the authors are grateful to the staff for their assistance.

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