Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published June 1, 1998 | public
Journal Article Open

Solid phase recrystallization of ZnS thin films on sapphire


High quality ZnS thin films are important for light emitting diodes based on ZnS, which is a very efficient phosphor. To improve as grown, molecular beam epitaxial, (111)-oriented cubic ZnS films, where defects were introduced due to the large mismatch between ZnS and a sapphire substrate (~ 20%), the ZnS was recrystallized by annealing at temperatures in the 825–1000 °C range, and sulfur pressures of 10 atm. The films have been structurally characterized by high-resolution x-ray diffraction, and electron diffraction by electron channeling patterns. Structural properties of the films annealed at temperatures above 900° have improved significantly. Tilting in the recrystallized films has been reduced more than tenfold, with the recrystallized grains being defect-free. Most films were recrystallized in the as-grown, cubic form, as shown by electron channeling patterns. The surfaces of the films have been inspected with scanning electron microscope, and on most samples they have been found to remain smooth, although on some of the films annealed at elevated temperatures we have observed hexagonal pits. The role of sulfur gas overpressure in the recrystallization has been discussed, and possible effects on film evaporation, grain boundary migration and compliancy of sapphire substrate have been analyzed.

Additional Information

©1998 American Institute of Physics. (Received 17 November 1997; accepted 29 March 1998) One of the authors (Z.Z.B.) is indebted to Professor W. L. Johnson for helpful discussions. This work was supported by the Advanced Research Project Agency, and monitored by the Office of Naval Research under Grant No. N00014-92-J-1845.


Files (129.7 kB)
Name Size Download all
129.7 kB Preview Download

Additional details

August 22, 2023
October 13, 2023