Published 1996
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Past, Present, and Future Cosmic Ray Identification Applications for Large Area Silicon Detectors
Abstract
An overview of the application of Si(Li) detectors to cosmic-ray identification is presented. A vacancy-related defect in FZ silicon that can limit the lithium compensation process in Si(Li) detector fabrication is discussed and a gettering process to remove this defect is outlined. Computer simulation of the gettering process is shown to yield native point defect diffusivity and concentration values approaching those recently proposed by Gösele, Plöβl and Tan.
Additional Information
Published in Proceedings of the Fourth International Symposium on High Purity Silicon, Proceedings Volume 96-13, The Electrochemical Society, Pennington, NJ 08534, pp. 407- 421 (1996).Attached Files
Submitted - 1997-44.pdf
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1997-44.pdf
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- 52297
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- CaltechAUTHORS:20141202-163530409
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2014-12-03Created from EPrint's datestamp field
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- Space Radiation Laboratory
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- 1997-44