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Published September 14, 2007 | Published
Book Section - Chapter Open

Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays


We compare a more complete characterization of the low temperature performance of a nominal 1.7um cut-off wavelength 1kx1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2kx2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs detector technology is well behaved and comparable to those obtained for state-of-the-art HgCdTe imagers for many space astronomical applications. We also discuss key differences observed between imagers in the two material systems.

Additional Information

© 2007 Society of Photo-Optical Instrumentation Engineers (SPIE). The effort described herein was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration and funded through the Science & Technology Infrastructure program. The detector development and procurement was sponsored by the United States Department of Energy under contract No. DE-AC02-05CH11231.

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August 19, 2023
January 14, 2024