Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics
A 2D thermal simulator and a model to evaluate high power lasers characteristics have been developed. With these models it was possible to optimize cavity length of InGaAs/GaAs (Multiple) Quantum Well 980 nm lasers realized both with Al-based and Al-free confining layers. A comprehensive experimental investigation of the influence of cavity length and temperature on the laser emission wavelength has been performed. This allows a fine trimming of the devices to match the Erbium doped fiber absorption bandwidth.
© 1994 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors are indebt to Prof. I.Montrosset, Dr. M.Goano and Mr. E.Torasso from Politecnico di Torino for their valuable suggestions, and all the Alcatel-Telettra Laser Laboratory staff for their help during the work.
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