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Published October 28, 2011 | public
Journal Article

Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots


A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si_3N_4 layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers. A two-step mechanism of dissolution of Si within the Ge QDs prior to oxidation is proposed.

Additional Information

© 2011 IOP Publishing Ltd. Received 15 July 2011, in final form 26 August 2011. Published 3 October 2011. The authors thank Professor S W Lee for valuable discussions. This work was supported by the National Science Council of ROC (NSC 100-2120-M-008-004 and NSC-99-2221-E-008- 095-MY3).

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