Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published September 18, 1989 | public
Journal Article Open

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe


We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high-purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ~ 1–2 Å) indicative of uniform high quality growth. Secondary-ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III-V buffer layers.

Additional Information

Copyright © 1989 American Institute of Physics. Received 17 April 1989; accepted 12 July 1989. We would like to thank B. Fitzpatrick for providing the ZnTe substrates. We would also like to thank C. A. Evans of Evans and Associates for help with the SIMS experiments, and J. Armstrong for help with the electron microprobe analysis. This work was supported by Defense Advanced Research Projects Agency, as monitored by Office of Naval Research under contract No. N00014-86-0841.


Files (691.6 kB)
Name Size Download all
691.6 kB Preview Download

Additional details

August 22, 2023
October 16, 2023