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Published October 8, 1990 | public
Journal Article Open

Type II broken-gap quantum wires and quantum dot arrays: A novel concept for self-doping semiconductor nanostructures


A novel concept for creating self-doping quantum wires and quantum dot arrays based upon the InAs-GaSb material system is proposed. The unusual type II, broken-gap band line-up in this system allows charge transfer across the InAs-GaSb interfaces. We employ a recently developed coupled band formalism to examine analytically the band structure of InAs-GaSb quantum dots and wires. The analysis shows that appropriately engineered nanostructures which contain high free-carrier densities are possible without intentional impurity doping. Quantum dots in this system behave as artificial quasiatoms, with ionization energy and valence determined by fabricationally determined parameters. Synthetic p-(n-)type semiconductors may therefore be formed from arrays of InAs(GaSb) quantum dots embedded in GaSb(InAs). InAs-GaSb quantum wires are also investigated and found to exhibit self-doping behavior. Possible fabrication schemes utilizing recently developed technologies are discussed.

Additional Information

© 1990 American Institute of Physics (Received 16 April 1990; accepted 17 July 1990) This work was supported by grants from the Office of Naval Research and the National Science Foundation, PCS would like to acknowledge a National Science Foundation graduate fellowship.


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