Published February 1961
| Version Submitted
Technical Report
Open
A 50 nanosecond linear gate circuit using transistors
Creators
Abstract
In the past, linear gate circuits for gating pulses of photomultiplier tubes have been mostly based on semiconductor diodes. Using diffused base transistors as a gate in an emitter input configuration provides favorable linearity and feedthrough properties. The circuit described here is an improved version of one developed by A. V. Tollestrup.
Additional Information
© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68. The valuable comments and suggestions of M. Sands and A. V. Tollestrup are gratefully acknowledged.Attached Files
Submitted - TR000515.pdf
Files
TR000515.pdf
Files
(4.9 MB)
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Additional details
Identifiers
- Eprint ID
- 73326
- DOI
- 10.7907/Z9SF2T66
- Resolver ID
- CaltechAUTHORS:20170109-092857597
Funding
- U.S. Atomic Energy Commission
- ΑΤ-(11-1)- 68
Dates
- Created
-
2017-01-09Created from EPrint's datestamp field
- Updated
-
2019-10-03Created from EPrint's last_modified field
Caltech Custom Metadata
- Caltech groups
- Synchrotron Laboratory
- Series Name
- Synchrotron Laboratory
- Series Volume or Issue Number
- CTSL-18
- Other Numbering System Name
- CTSL
- Other Numbering System Identifier
- 18