TEM Studies of Dislocations in Deformed Ga_(x)In_(1-x)As Single Crystals
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Abstract
The control of dislocation density during the growth of GaAs and related compounds is highly desirable for obtaining improved performance and reliability of opto-electronic devices. Doping of single crystal GaAs grown by the LEC process with Indium has been known to reduce the dislocation density significantly. Substitutional solid-solution strengthening of GaAs as an InAs unit been suggested to be responsible for reduction of dislocation density. To understand the mechanism involved in dislocation density reduction deformation tests have been performed on [001] oriented Ga_XIn_(1-x)As single crystals in the temperature range 700-1100°C and this paper reports some results of the TEM characterization of dislocations in these deformed single crystals.
Additional Information
Copyright © 1987 by San Francisco Press. This work was supported by DARPA Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129 and the materials were supplied by Westinghouse R&D Center under their contract with DARPA, No. DARPA-Westinghouse-N-0014-84-C-0632.Additional details
Identifiers
- Eprint ID
- 49707
- Resolver ID
- CaltechAUTHORS:20140915-114401795
Funding
- Defense Advanced Research Projects Agency (DARPA)
- 5526
- Air Force Office of Scientific Research (AFOSR)
- F49620-85-C-0129
- Office of Naval Research (ONR)
- N-00014-84-C-0632
Dates
- Created
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2014-09-15Created from EPrint's datestamp field
- Updated
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2020-03-03Created from EPrint's last_modified field