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Published April 13, 1998 | Published
Journal Article Open

Ultrathin pseudomorphic Sn/Si and SnxSi1 – x/Si heterostructures


Ultrathin, coherently strained Sn/Si and SnxSi1–x/Si alloy quantum well structures with substitutional Sn incorporation far in excess of the equilibrium solubility limit have been fabricated via substrate temperature and growth flux modulations in molecular beam epitaxy. Sn/Si single and multiple quantum wells with Sn coverage up to 1.3 ML, Sn0.05Si0.95/Si multiple quantum wells of up to 2.0 nm, and Sn0.16Si0.84/Si multiple quantum wells of up to 1.1 nm are determined to be pseudomorphic, and coverage-dependent Sn segregation dynamics are observed.

Additional Information

© 1998 American Institute of Physics. Received 24 October 1997; accepted 16 February 1998. This work was supported by the National Science Foundation and an Intel Graduate Fellowship (K.S.M.). The authors also acknowledge expert technical assistance from M. Easterbrook and C. Gardland, and C. Ahn, J. Christopherson, and R. Ragan for helpful discussions.

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