Published February 2011 | Version public
Journal Article

Next-Generation CMOS RF Power Amplifiers

Abstract

Ten years ago, it was widely accepted conventional wisdom that wattlevel fully integrated power amplifiers (PAs) were not feasible in standard complimentary metal-oxide-semiconductor (CMOS) technology. Today millions of such devices are commercially produced and shipped every month and are used in hundreds of millions of cellular phones across the world. Such dramatic transition from being considered an impossibility even by most optimistic academics to the obvious future direction to be followed by everyone happened through a series of demonstrations based on new architectures radically different from the known PA topologies applied over more than half a century.

Additional Information

© 2011 IEEE. Date of publication: 14 January 2011.

Additional details

Identifiers

Eprint ID
23090
Resolver ID
CaltechAUTHORS:20110324-091631996

Dates

Created
2011-03-29
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field

Caltech Custom Metadata

Other Numbering System Name
INSPEC Accession Number
Other Numbering System Identifier
11759677