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Published September 2004 | public
Journal Article Open

Erbium-implanted high-Q silica toroidal microcavity laser on a silicon chip


Lasing from an erbium-doped high-Q silica toroidal microcavity coupled to a tapered optical fiber is demonstrated and analyzed. Average erbium ion concentrations were in the range 0.009–0.09 at. %, and a threshold power as low as 4.5 µW and an output lasing power as high as 39.4 µW are obtained from toroidal cavities with major diameters in the range 25–80 µm. Controlling lasing wavelength in a discrete way at each whispering-gallery mode was possible by changing the cavity loading, i.e., the distance between the tapered optical fiber and the microcavity. Analytic formulas predicting threshold power and differential slope efficiency are derived and their dependence on cavity loading, erbium ion concentration, and Q factor is analyzed. It is shown that the experimental results are in good agreement with the derived formulas.

Additional Information

©2004 The American Physical Society (Received 17 March 2004; published 16 September 2004) This work was supported by the Defense Advanced Research Project Agency, the National Science Foundation, and the Caltech Lee Center. The Dutch part of this work was part of the research program of the Foundation for Fundamental Research on Matter (FOM) and was financially supported by the Dutch Organization for Fundamental Research on Matter.


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