Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published July 1988 | Published
Journal Article Open

Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures


We report an experimental study of the electrical properties of single‐barrier Hg_(1−x)Cd_xTe heterostructures grown by molecular‐beam epitaxy. At high temperature, the measured current is interpreted to be the sum of thermionic and tunneling hole currents. This analysis is applied to data from each of three samples, yielding values of the HgTe–CdTe valence‐band discontinuity between 290±50 and 390±75 meV at 300 K. In all three samples, data taken over the range 190–300 K are consistent with a valence‐band offset which decreases at lower temperatures. Current–voltage curves are taken at 4.2 K, yielding a novel single‐barrier negative differential resistance (NDR) due to electron tunneling. Theoretical simulations indicate that ΔE_v must be <100 meV at 4.2 K to produce NDR.

Additional Information

© 1988 American Vacuum Society. Received 15 December 1987; accepted 24 February 1988. We wish to acknowledge S. Nieh for providing us with important TEM data, and O. J. Marsh, T. K. Woodward, and M. B. Johnson for valuable discussions and assistance. This work was supported by the Air Force Office of Scientific Research under Contract No. AFOSR-86-0306 and by the Defense Advanced Research Projects Agency under Contract No. N00014-86-K-0841 and No. F49620-87-C-0021. One of us (D.H.C.) received financial support from International Business Machines Corporation.

Attached Files

Published - CHOjvstb88.pdf


Files (362.4 kB)
Name Size Download all
362.4 kB Preview Download

Additional details

August 19, 2023
October 17, 2023