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Published December 15, 2014 | public
Journal Article

Single phase, single orientation Cu_2O (100) and (110) thin films grown by plasma-assisted molecular beam epitaxy


Epitaxial growth of cuprous oxide (Cu_2O) has been achieved on (100) and (110) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90% Ar/10% O_2 plasma. Cu_2O films grown using pure oxygen on MgO (100) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (110) using pure oxygen are phase stable and predominantly (110) oriented, with some (200) orientation present. Films grown using an Ar/O_2 plasma on MgO (100) have improved phase stability and a single (110) orientation. Growth on MgO (110) using an Ar/O_2 plasma yields highly reproducible (110) oriented single phase Cu_2O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu_2O phase stability.

Additional Information

© 2014 Elsevier B.V. Received 16 July 2014, Revised 15 October 2014, Accepted 21 October 2014, Available online 30 October 2014. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project, as well as Carol Garland for TEM training and helpful assistance.

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