CaltechAUTHORS
Published June 2021 | Version public
Book Section - Chapter Metadata-only

ZnS_xSe_(1–x) Carrier-Selective Contacts for Silicon Photovoltaics

Creators

  • 1. ROR icon California Institute of Technology
  • 2. ROR icon Arizona State University

Abstract

The wide bandgaps and superior conductivity of ZnS_xSe_(1–x) semiconductors to amorphous Si suggest an alternative carrier-selective contact in silicon heterojunction solar cells. Electron-selective ZnS_xSe_(1–x) front contacts on p-type c-Si solar cells are explored by simulating in Sentaurus TCAD a large design parameter space informed by experimentally determined optoelectronic properties. Comparable performance to experimental and simulated p-SHJ reference devices is shown, with a champion simulated device efficiency of 20.8%.

Additional Information

© 2021 IEEE. The information, data, or work presented herein was funded in part by the U.S. Department of Energy through the Bay Area Photovoltaic Consortium under Award Number DE-EE0004946 and additionally through the Energy Efficiency and Renewable Energy Program, under Award Number DEEE0006335; by the National Science Foundation (NSF) Graduate Research Fellowship under Grant No. 1144469; and in part by the NSF and the Department of Energy (DOE) under NSF CA No. EEC-1041895.

Additional details

Additional titles

Alternative title
ZnSxSe1–x Carrier-Selective Contacts for Silicon Photovoltaics

Identifiers

Eprint ID
111809
Resolver ID
CaltechAUTHORS:20211109-223403199

Funding

Department of Energy (DOE)
DE-EE0004946
Department of Energy (DOE)
DE-EE0006335
NSF Graduate Research Fellowship
DGE-1144469
NSF
EEC-1041895

Dates

Created
2021-11-11
Created from EPrint's datestamp field
Updated
2021-11-11
Created from EPrint's last_modified field