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Published July 15, 1980 | Published
Journal Article Open

A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser


A GaAlAs double-heterostructure laser has been monolithically integrated with a heterojunction bipolar transistor on a GaAs substrate. Integration is achieved by means of a mutually compatible structure formed by Be ion implantation. Typical pulsed threshold currents for the laser are 60 mA, and the transistors have a typical common-emitter current gain of 900.

Additional Information

© 1980 American Institute of Physics. Received 19 February 1980; accepted for publication 8 May 1980. This research was supported by the National Science Foundation and the Office of Naval Research.

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Published - KATapl80a.pdf


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