Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published January 1988 | Published
Journal Article Open

Electrical damage induced by ion beam etching of GaAs


We have examined the electrical damage induced in GaAs by ion milling and ion beam assisted etching, relevant to the fabrication of small conducting structures. The depth of the damage was measured by Schottky barrier measurements with in situ deposited gold contacts and by resistance and mobility measurements of etched two-dimensional electron gas structures. The effect of exposed etched sidewalls on the conductivity of narrow wires was examined for GaAs/AlGaAs structures. We find that it is possible to create wires narrower than surface depletion lengths by defining the structures through ion beam induced damage without exposing the sidewalls. In particular, narrow conducting wires can be defined solely by etching the thin-undoped-GaAs cap layer atop the modulation doped material.

Additional Information

© 1988 American Vacuum Society. (Received 28 May 1987; accepted 28 September 1987) We thank L. M. Schiavone and E. D. Beebe for help with sample preparation and N. Tabatabaie for help with the contact I-V measurements.

Attached Files

Published - SCHEjvstb88.pdf


Files (379.2 kB)
Name Size Download all
379.2 kB Preview Download

Additional details

August 22, 2023
March 5, 2024