On-wafer measurements of S-MMIC amplifiers from 400–500 GHz
Abstract
In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400-500 GHz range. A single-stage amplifier and two three-stage amplifiers with similar topology are presented, and have been fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor (HEMT) process. The circuits were fabricated using different indium channel compositions on different wafers, and comparison of the results based on the indium content will be presented. We have performed on-wafer S-parameter calibration and measurements using newly developed WR2.2 waveguide wafer probes from 325-508 GHz. We measured approximately 5 dB of gain for the single stage amplifier at 437 GHz, and approximately 10 dB of gain at 474 GHz for a three-stage amplifier, with over 9 dB of gain at 490 GHz.
Additional Information
© 2011 IEEE. The authors would like to thank Linda Ferreira of NGC for layout work, and Dr. Mark Rosker of DARPA. This research was carried out in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. This research was also supported in part by the W. M. Keck Institute for Space Studies.Additional details
- Eprint ID
- 64933
- Resolver ID
- CaltechAUTHORS:20160301-154352256
- NASA/JPL/Caltech
- Keck Institute for Space Studies (KISS)
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2016-03-02Created from EPrint's datestamp field
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2021-11-10Created from EPrint's last_modified field
- Caltech groups
- Keck Institute for Space Studies