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Published December 7, 2009 | Published
Journal Article Open

Advanced silicon processing for active planar photonic devices


Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 °C, with single facet power as high as 12.7 mW at 15 °C. Planar Si optical resonators with Q = 4.8 × 10^6 are also demonstrated. By using a SF_6/C_(4)F_8 reactive ion etch, followed by H_(2)SO_4/HF surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.

Additional Information

© 2009 AVS. Received 8 July 2009; accepted 5 October 2009; published 7 December 2009. This work was supported by Defense Advanced Research Projects Agency DARPA Contract No. N66001-07-1-2058 and HR0011-04-1-0054, the U.S. Air Force Office of Scientific Research AFOSR Grant No. FA9550-06-1-0480, and the Center for Science and Engineering of Materials, a National Science Foundation NSF Materials Research Science and Engineering Center at Caltech. The authors thank the Kavli Nanoscience Institute, Caltech, for supporting fabrication. M.S. thanks the NSF Graduate Research Fellowship program. A.Z. acknowledges postdoctoral fellowships from the Center for the Physics of Information, Caltech, and the Rothschild fellowship from Yad-Hanadiv Foundation, Israel.

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