Published February 17, 2010 | Version Published
Book Section - Chapter Open

Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

  • 1. ROR icon California Institute of Technology

Abstract

Compound single junction and multijunction solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in seriesconnected tandem cells to access the full solar spectrum. Researchers focused on improving the electrical properties of solar cells by optimizing the material growth conditions, however relatively little work to date has been devoted to light trapping and enhanced absorption in III-V compound solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film solar cells by means of numerical modeling. Flat dielectric and metal back reflectors that might be introduced into the solar cell via wafer-bonding, epitaxial lift-off or deposition techniques have been shown to increase the short circuit current and the photovoltaic efficiency of solar cells.

Additional Information

© 2009 IEEE. This work was supported by the Department of Energy, and the Center for Science and Engineering of Materials, an NSF Materials Research Science and Engineering Center at Caltech.

Attached Files

Published - Aydin2009p11089Pvsc_2008_33Rd_Ieee_Photovoltaic_Specialists_Conference_Vols_1-4.pdf

Files

Aydin2009p11089Pvsc_2008_33Rd_Ieee_Photovoltaic_Specialists_Conference_Vols_1-4.pdf

Additional details

Identifiers

Eprint ID
19433
DOI
10.1109/PVSC.2009.5411432
Resolver ID
CaltechAUTHORS:20100816-091334419

Related works

Funding

Department of Energy (DOE)
NSF

Dates

Created
2010-08-16
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field

Caltech Custom Metadata

Caltech groups
Kavli Nanoscience Institute
Series Name
IEEE Photovoltaic Specialists Conference