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Published May 19, 2003 | Published
Journal Article Open

Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)


We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.

Additional Information

© 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.

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