Published October 1984
| Version public
Journal Article
Open
Impurity effects in transition metal silicides
Creators
Abstract
Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.
Additional Information
© 1984 American Vacuum Society. Received 5 June 1984; accepted 31 July 1984. The authors thank Dr. S. S. Lau, Dr. M. Bartur, Dr. K. T. Ho, and I. Suni for helpful discussions. The research described in this paper was sponsored in part by the Jet Propulsion Laboratory, California Institute of Technology, Director's Discretionary Fund through an agreement with the National Aeronautics and Space Administration (A. Morrison). The authors wish to thank Dr. Paihung Pan and Dr. Peter W. Lew for permission to use their figures.Files
LIEjvstb84.pdf
Files
(1.0 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:a40ba8f9874ab48821dae9c4a86392a9
|
1.0 MB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 4753
- Resolver ID
- CaltechAUTHORS:LIEjvstb84
Dates
- Created
-
2006-09-06Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field