Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published November 30, 2006 | Supplemental Material
Journal Article Open

Scanning Tunneling Microscopy and Spectroscopy of Wet-Chemically Prepared Chlorinated Si(111) Surfaces


Chlorine-terminated Si(111) surfaces prepared through the wet-chemical treatment of H-terminated Si(111) surfaces with PCl_5 (in chlorobenzene) were investigated using ultrahigh vacuum scanning tunneling microscopy (UHV cryo-STM) and tunneling spectroscopy. STM images, collected at 77 K, revealed an unreconstructed 1 × 1 structure for the chlorination layer, consistent with what has been observed for the gas phase chlorination of H-terminated Si(111). However, the wet-chemical chlorination is shown to generate etch pits in the Si(111) surface, with an increase in etch pit density correlating with increasing PCl_5 exposure temperatures. These etch pits were assumed to stabilize the edge structure through the partial removal of the 〈112̄〉 step edges. Tunneling spectroscopy revealed a nonzero density of states at zero bias. This is in contrast to the cases of H-, methyl-, or ethyl-terminated Si(111), in which similar measurements have revealed the presence of a large conductance gap.

Additional Information

© 2006 American Chemical Society. Received: July 10, 2006; In Final Form: September 5, 2006. Publication Date (Web): November 9, 2006. The authors acknowledge the National Science Foundation, grant CHE-0213589 (NSL), NSF-CCF-05204490, and the Department of Energy (JRH) for support of this research. The authors thank Professor Nate Lewis, Rosemary Dyane Rohde, Heather Dawn Agnew, Dr. Woon-Seok Yeo, and Dr. Patrick T. Hurley for helpful discussions and technical assistance in preparation of the chlorinated silicon samples.

Attached Files

Supplemental Material - jp064342osi20060710_074300.pdf


Files (260.0 kB)
Name Size Download all
260.0 kB Preview Download

Additional details

August 19, 2023
October 25, 2023