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Published August 5, 2015 | public
Journal Article

Cu-Catalyzed Vapor–Liquid–Solid Growth of SiGe Microwire Arrays with Chlorosilane and Chlorogermane Precursors


Selected area Cu-catalyzed vapor–liquid−solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm min–1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Additional Information

Special thanks goes to Dr. Virginia Altoe and Carol Garland for their assistance with TEM characterization. Critical support and equipment were provided by the Kavli Nanoscience Institute. This work benefited from use of the Applied Physics and Materials Science Department's Transmission Electron Microscopy Facility. This material is based upon work supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect those of NSF or DOE. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The authors declare no competing financial interest.

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