Published August 1991
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Journal Article
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Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers
Abstract
The authors report on the design, fabrication, and characterization of high-power strained-layer (SL) InGaAs single-quantum-well (SQW) lasers. The lasers emit a 0.980 µm. They deliver over 100 mW CW optical power at room temperature in a stable single lateral mode. The maximum CW output power measured is 265 mW. The lasers have been successfully used as pump sources for an erbium-doped fiber amplifier.
Additional Information
© Copyright 1991 IEEE. Reprinted with permission. Manuscript received April 22, 1991. This work was supported by Defense Advanced Research Projects Agency (DARPA) and the Office of Naval Research (ONR).Files
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- CaltechAUTHORS:CHEieeeptl91
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2007-09-24Created from EPrint's datestamp field
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