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Published April 1, 1979 | public
Journal Article Open

Monolithic integration of an injection laser and a metal semiconductor field effect transistor


A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.

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Copyright © 1979 American Institute of Physics Received 4 December 1978; accepted for publication 22 January 1979 Research supported by the Office of Naval Research and the National Science Foundation.


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