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Published January 1994 | metadata_only
Journal Article

Topology of synthetic, boron-doped diamond by scanning tunneling microscopy


Scanning tunneling microscopy (STM) studies were performed on a large, boron-doped, synthetic diamond crystal in order to examine its surface morphology and growth characteristics. This single crystal synthetic diamond should better mimic naturally grown diamonds than thin diamond films which may be affected by the substrate or the deposition technique used. The synthetic diamond is shown to exhibit microscopic features similar to the macroscopic features observed on natural diamonds indicating similar growth and/or defect properties. The ability to obtain adequate current for this STM study is a result of the high boron content in the synthetic diamond, which is much higher than that of natural diamonds.

Additional Information

© 1993 Elsevier Sequoia. Received September 28, 1992; accepted in final form March 23, 1993. We thank the Office of Naval Research and the National Institutes of Health-National Research Service Award for their support and General Electric for the loan of the diamonds. The SIMS analyses were graciously provided by Robert Wilson of Hughes Research.

Additional details

August 22, 2023
August 22, 2023