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Published June 15, 1978 | Published
Journal Article Open

Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates


The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.

Additional Information

© 1978 American Institute of Physics. Received 21 February 1978; accepted for publication 6 April 1978. Online Publication Date: 8 August 2008. Work supported by the National Science Foundation and the Office of Naval Research.

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Published - LEEapl78b.pdf


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