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Published February 28, 2011 | Version Published
Journal Article Open

Wide-band-gap InAlAs solar cell for an alternative multijunction approach

Creators

  • 1. ROR icon California Institute of Technology

Abstract

We have fabricated an In_(0.52)Al_(0.48)As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free In_xAl_(1−x)As alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of In_xAl_(1−x)As showed good material quality and lifetime of over 200 ps. A high band gap In_(0.35)Al_(0.65)As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate.

Additional Information

© 2011 American Institute of Physics. Received 23 September 2010; accepted 5 December 2010; published online 28 February 2011. The authors acknowledge D. M. Callahan, J. S. Fakonas, G. M. Kimball, J. N. Munday, and D. M. O'Carroll and financial support from the Department of Energy—Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071.

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Published - ApplPhysLett_98_093502.pdf

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Additional details

Identifiers

Eprint ID
35624
Resolver ID
CaltechAUTHORS:20121126-095859220

Funding

Department of Energy (DOE)
DE-FG36-08GO18071

Dates

Created
2012-11-26
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Updated
2021-11-09
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Caltech groups
Kavli Nanoscience Institute