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Published February 28, 2011 | Published
Journal Article Open

Wide-band-gap InAlAs solar cell for an alternative multijunction approach


We have fabricated an In_(0.52)Al_(0.48)As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free In_xAl_(1−x)As alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of In_xAl_(1−x)As showed good material quality and lifetime of over 200 ps. A high band gap In_(0.35)Al_(0.65)As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate.

Additional Information

© 2011 American Institute of Physics. Received 23 September 2010; accepted 5 December 2010; published online 28 February 2011. The authors acknowledge D. M. Callahan, J. S. Fakonas, G. M. Kimball, J. N. Munday, and D. M. O'Carroll and financial support from the Department of Energy—Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071.

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Published - ApplPhysLett_98_093502.pdf


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