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Published September 28, 1989 | public
Journal Article Open

Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes


Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50-μm across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW).

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©1989 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.


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