Published August 1, 1990
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Two-band modeling of narrow band gap and interband tunneling devices
Abstract
A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.
Additional Information
Copyright © 1990 American Institute of Physics. Received 30 November 1989; accepted 2 April 1990. The authors would like to thank D. Ting for helpful discussions. This work was supported in part by the Office of Naval Research under Contract No. N00014-89-J-1141. Three of us (J.R.S., E.T.Y., and M.K.J.) would like to acknowledge financial support from the Wilhelm and Martina Lundgren Foundation, the AT&T Foundation, and the Natural Sciences and Engineering Research Council of Canada, respectively.Files
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