Published September 3, 1990
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Microscopic and macroscopic uniformity control in plasma etching
Abstract
By cooling substrates to low temperatures (–40 °C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion-activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.
Additional Information
© 1990 American Institute of Physics. Received 10 April 1990; accepted 19 June 1990.Attached Files
Published - GIAapl90.pdf
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