Published June 1996
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Monolithic 40-GHz 670-m W HBT Grid Amplifier
Abstract
A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.
Additional Information
© 1996 IEEE. Manuscript submitted February 22, 1996. This research was supported by the Air Force Material Command/Rome Laboratory, ARPA Contract #F30602-93-C-0188, and the Army Research Office.Attached Files
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- 29201
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- CaltechAUTHORS:20120208-113853373
Funding
- Air Force Material Command/Rome Laboratory
- Advanced Research Projects Agency (ARPA)
- F30602-93-C-0188
- Army Research Office (ARO)
Dates
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2012-02-08Created from EPrint's datestamp field
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2021-11-09Created from EPrint's last_modified field
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