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Published March 2024 | Version Published
Journal Article Open

In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

Creators

  • Ye, Benjamin B. ORCID icon
  • Song, Ganquan ORCID icon
  • Ye, Jeff J. ORCID icon

Abstract

Polymeric residues and films of various thicknesses on the wafer backside and the edge frontside bevel and backside are known to cause substantial yield losses. An additional ex situ bevel etch step can clear away these buildups from the edge bevel area but not from the wafer backside. In this paper, we demonstrate a novel and innovative in situ pin-up plasma clean step that can effectively remove polymers from both the wafer backside and the edge bevel areas, eliminating the need for the bevel etch step. A physical analysis of blanket test wafers and patterned product wafers that have underwent the pin-up clean step in inductively coupled plasma and capacitively coupled plasma etch systems reveals that the pin-up clean step can reduce defect counts on product wafers and improve manufacturing cycle time and throughput by relaxing the queue time constraint.

Copyright and License

2024 Published under an exclusive license by the AVS.

Acknowledgement

We would like to thank Shawn Lewis and Jim Gallegos for supporting the development of the pin-up clean process. We would also like to thank all team members in the Surface Analysis Labs at Micron Technology, Inc. in Boise and Virginia for performing SEM, TEM, and XPS analysis.

Contributions

Benjamin B. Ye: Conceptualization (equal); Data curation (equal); Formal analysis (lead); Investigation (lead); Methodology (lead); Software (lead); Validation (lead); Visualization (lead); Writing – original draft (lead); Writing – review & editing (lead). Ganquan Song: Data curation (equal); Formal analysis (equal); Investigation (equal); Methodology (equal). Jeff J. Ye: Conceptualization (lead); Data curation (equal); Formal analysis (equal); Funding acquisition (equal); Investigation (equal); Methodology (equal); Project administration (lead); Supervision (lead); Writing – original draft (equal); Writing – review – editing (equal).

Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request. The data are not publicly available due to the proprietary nature of the processes and equipment used to carry out the experiments.

Conflict of Interest

The authors have no conflicts to disclose.

Additional Information

Special Collection: CHIPS: Future of Semiconductor Processing and Devices

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ISSN
2166-2754
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Keywords and subjects

Keywords

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films
  • Process Chemistry and Technology
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

Details

DOI
10.1116/6.0003300
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DOI

10.1116/6.0003300

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Resource type
Journal Article
Publisher
American Vacuum Society
Published in
Journal of Vacuum Science & Technology B, 42(2), 022202, ISSN: 2166-2746, 2024.
Languages
English

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  • No commercial reproduction, distribution, display or performance rights in this work are provided.
    No further description.

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Created
February 13, 2024
Modified
March 1, 2025
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