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Published December 1, 1996 | public
Journal Article Open

Modeling and performance of a 100-element pHEMT grid amplifier


A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements with theory. The grid includes stabilizing resistors in the gate. Measurements show the grid has a peak gain of 10 db when tuned for 10 GHz and a gain of 12 dB when tuned for 9 GHz. The maximum 3-dB bandwidth is 15% at 9 GHz. The minimum noise figure is 3 dB. The maximum saturated output power is 3.7 W, with a peak power-added efficiency of 12%. These results area significant improvement over previous grid amplifiers based on heterojunction bipolar transistors (HBT's).

Additional Information

© Copyright 1996 IEEE. Reprinted with permission. Manuscript received April 10, 1995, revised September 13, 1995. This research was supported by the Army Research Office and Lockheed Martin Laboratories. M.P. De Lisio held NSF and AASERT fellowships. The authors are grateful to S. Weinreb of the University of Massachusetts and N. Byer of Sanders, a Lockheed Martin Company, for their support and suggestions.


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