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Published July 1988 | Published
Journal Article Open

Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions


From considerations of dopability, band offset, and lattice match, we find that of the various heterojunctions containing II–VI compounds, the n-AlSb/p-ZnTe heterojunction has the most promising properties for fabricating visible light emitters. The materials lattice match to 0.5%. Experimental evidence and theoretical predictions for the band offset blocking minority carrier injection indicate a range from zero to 0.3 eV maximum. This range of values is the lowest for heterojunctions involving wide-gap II–VI's. Substantial electron injection into the p-ZnTe should be possible. Control of doping may suffice to suppress undesired hole current originating in the ZnTe.

Additional Information

© 1988 American Vacuum Society. Received 3 February 1988; accepted 4 May 1988. The support of the Defense Research Projects Agency under Contract No. N00014-86-K-0841 is gratefully acknowledged.

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