Published March 1, 1981
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Journal Article
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Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers
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Abstract
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-mm-wide active region.
Additional Information
Copyright © 1981 American Institute of Physics. Received 13 October 1980; accepted for publication 18 December 1980. The authors wish to thank P. Koen of Caltech for taking the scanning electron microscope (SEM) pictures. This work is supported by the Office of Naval Research and the National Science Foundation.Files
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- 9897
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- CaltechAUTHORS:CHEapl81
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2008-03-26Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field